This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thermal Resistance, Case-to-Sink Typ. A1, December General Description.
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General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. IRF Series. IRFS Series. V DSS. Drain-Source Voltage. Note 1. V GSS. Gate-Source Voltage. Note 2. I AR Avalanche Current. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,.
Thermal Characteristics. Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. A1, December Electrical Characteristics. Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. Gate-Body Leakage Current, Forward.
Gate-Body Leakage Current, Reverse. On Characteristics. V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Note 4. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance. C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge. Q gd Gate-Drain Charge. Note 4, 5. Note 4, 5 Q rr Reverse Recovery Charge. Note 4 -- 1.
Repetitive Rating : Pulse width limited by maximum junction temperature. Essentially independent of operating temperature. Download IRF Datasheet. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Repetitive Rating : Pulse width limited by maximum junction temperature 2.
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